SHF ATTENUATOR Russian patent published in 2012 - IPC H01P1/00 

FIELD: electricity.

SUBSTANCE: invention suggests SHF attenuator consisting of at least one group including resistors and one resistor is connected in series, another is connected in parallel to transmission lines at attenuator input and output; field-effect transistor (FET) with Schottky barrier junction, at that resistor connected in series is included between input and output transmission lines while resistor connected in parallel is connected by one end with drain of FET with Schottky barrier junction, which gate is connected to source of permanent control voltage, and FET source is grounded. In each attenuator group there is additional FET with Schottky barrier junction and two inductance coils, at that the other end of the parallel resistor is connected to transmission line at the output, one end of inductance coil is connected to drain of the first FET with Schottky barrier junction, the other end is grounded; one end of the second inductance coil is connected to transmission line at the input, the other end of the second inductance coil is connected to source of the second FET with Schottky barrier junction, which drain is connected to transmission line at the output; gates of both FETs are connected between each other and to source of permanent control voltage respectively.

EFFECT: expansion of operating frequency band, decrease of voltage standing-wave ratio, decrease phase change value for SHF signal at maintenance of small values for real losses Al and target preset damping value Ad.

2 cl, 5 dwg