IMPROVING MEMORY READ STABILITY USING SELECTIVE PRECHARGE Russian patent published in 2012 - IPC G11C7/12 

FIELD: information technology.

SUBSTANCE: method of managing a memory device, having a bit line comprising a first section and a second section, involving precharging the first section of the bit line to a first voltage; precharging the second section of the bit line to a second voltage different from the first voltage; and distributing charge between the first section of the bit line and the second section of the bit line to obtain a final voltage between the first voltage and the second voltage.

EFFECT: high read stability owing lower voltage of the bit line.

25 cl, 10 dwg