MEMORY DEVICE BASED ON CHANGE IN RESISTANCE Russian patent published in 2017 - IPC G11C11/15 G11C13/00 

FIELD: information technology.

SUBSTANCE: according to one of the embodiments, memory device based on the resistance change includes a memory cell, a reading amplifier and a global bit line. Memory cell is in the location of crossed local bit line and word line. Memory cell is connected both to a local bit line and a word line. Reading amplifier reads the data stored in the memory cell by read current supply to the memory cell. Global bit line is connected between the local bit line and the reading amplifier. Global read bit line delivers read current supplied through the reading amplifier to the local bit line. Reading amplifier charges the global bit line before the local bit line and the global bit line are connected to each other.

EFFECT: reduction of recording and reading time.

20 cl, 9 dwg