FIELD: information technologies.
SUBSTANCE: systems, circuits and methods are disclosed to control word line voltage in a word line transistor in a magnetoresistive RAM with transfer of spin torque (STT-MRAM). The first voltage may be sent to a word line transistor for recording operations. The second voltage, which is less than the first voltage, may be sent to a word line transistor during reading operations.
EFFECT: control of WL transistor signal level for reading and recording operations.
20 cl, 12 dwg
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