FIELD: information technology.
SUBSTANCE: systems, circuits and methods for determining read and write voltages for a given word line transistor in spin transfer torque magnetoresistive random access memory (STT-MRAM) are disclosed. A first voltage can be supplied to the write operations so that the write operations occur in the saturation region of the word line transistor. A second voltage, which is less than the first voltage, can be supplied for read operations so that read operations occur in the linear region of the word line transistor.
EFFECT: short response time.
20 cl, 15 dwg
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