SEMICONDUCTOR LASER Russian patent published in 2014 - IPC H01S5/323 

FIELD: electricity.

SUBSTANCE: semiconductor laser includes a heterostructure grown on a GaAs substrate, restricted with end surfaces perpendicular to the growth axis, with coatings applied onto them, on one side - with a reflecting coating, and on the other one - with an anti-reflecting coating, and including a waveguide layer with an active region, the formed p-i-n-junction, a contact layer and restricting layers; deflection indices of the latter are lower than those of the substrate and other layers; the contact layer and the restricting layer adjacent to it are alloyed with acceptors, and the substrate and the other restricting layer are alloyed with donors. The heterostructure includes a GaAs buffer layer alloyed with donors and arranged between the substrate and the restricting layer, and the active region of the waveguide layer includes at least three quantum wells InGaAs, which are made in the p-i-n-junction formed with waveguide, buffer and restricting layers; besides, thicknesses of the waveguide layer and the restricting layer adjacent to the buffer layer are chosen so that there can be provided losses for radiation yield to the substrate in the range of 10-50 cm^-1 and angle φ of the radiation yield to the substrate in the range of 0-3°.

EFFECT: providing possible reduction of radiation divergence.

8 cl, 1 dwg