MICROWAVE ATTENUATOR Russian patent published in 2011 - IPC H01P1/22 

FIELD: electricity.

SUBSTANCE: microwave attenuator consists of at least one dischage, every of which comprises transmission lines at the inlet and outlet with identical wave resistances, resistors, some ends of which are connected to transmission lines at the inlet and outlet accordingly, field transistors with a Schottky barrier, gates of which are connected between each other and are connected to one source of DC control voltage, and their sources are grounded, a section of a transmission line with the length equal to one quarter of the wave length in the transmission line. In which each discharge of the attenuator comprises two resistors and two field transistors with a Schottky barrier, one of the ends of the transmission line section is connected to the transmission line at the inlet, and the other one - with the transmission line at the outlet, other ends of the first and second resistors are connected to the drain of the first and second field transistors with a Schottky barrier accordingly, at the same time the wave resistance of the transmission line section is equal to the wave resistance of the transmission line section at the inlet and the outlet of the attenuator, the resistance of the first R1 and the second R2 resistors is identified using ratios.

EFFECT: reduced direct microwave losses, reduced coefficient of a standing voltage wave, reduction of weight-dimension characteristics.

4 dwg, 1 ex