SAPPHIRE WITH r-PLANE, METHOD AND DEVICE FOR ITS OBTAINING Russian patent published in 2012 - IPC C30B15/34 C30B29/20 C30B29/64 C30B15/14 C30B15/20 

FIELD: metallurgy.

SUBSTANCE: according to one of the versions, there described is formation method of monocrystalline sapphire with r-plane, which involves the following stages: stage at which the device with molten metal is inoculated with inoculum having orientation of r-plane, which is almost parallel to longitudinal axis of hole of shaper and parallel to crystal growth direction; stage at which there crystallised is monocrystalline sapphire above shaper; at that, monocrystalline sapphire has orientation of r-axis, which is almost perpendicular to the main surface of sapphire; stage at which monocrystalline sapphire is passed through the first area having the first temperature gradient of less than approximately 26°C/cm; and further stage at which sapphire is passed through the second area having the second temperature gradient of less than approximately 6.4°C/cm; at that, the first area borders with shaper tip and has the length which is less than approximately half an inch, and the other area borders with the first area.

EFFECT: obtaining monocrystalline material showing the absence of small-angle borders.

25 cl, 11 dwg, 1 ex