METHOD AND APPARATUS FOR GROWING SAPPHIRE MONOCRYSTAL WITH ORIENTATION IN C-PLANE Russian patent published in 2011 - IPC C30B15/34 C30B15/36 C30B15/14 C30B29/20 C30B29/64 

FIELD: physics.

SUBSTANCE: method material of a sapphire monocrystal with orientation in the C-plane involves inoculating the apparatus with molten inoculum, having the orientation of the C axis mainly perpendicular to the longitudinal axis of the opening of the shaper; crystallisation of the sapphire monocrystal over the shaper, where the sapphire monocrystal has the orientation of the C axis mainly perpendicular to the main surface of the sapphire; stretching the sapphire through a first region having a first temperature gradient. The sapphire is at temperature higher than 1850°C, where the first region includes a part of sapphire whose length is greater than or equal to 1 cm. The sapphire is successively passed through a second region with a second temperature gradient which is lower than the first temperature gradient, where the sapphire is at temperature higher than 1850°C. The first temperature gradient is at least 10°C/cm higher than the second and the sapphire is cooled with orientation in the C-plane to obtain material with less than 10000 dislocation violations per cm².

EFFECT: obtained material has low polycrystallinity and low dislocation density.

21 cl, 14 dwg