METHOD TO CONTROL VOLTAGE OF POWER SEMICONDUCTOR INSTRUMENT SWITCHING Russian patent published in 2013 - IPC H01L29/74 

FIELD: electricity.

SUBSTANCE: method to control voltage of power semiconductor instrument switching with a semiconductor structure, comprising a triode zone of p⁺-n-p-type, surrounded with at least one thyristor zone of p⁺-n-p-n⁺-type, includes local radiation by protons, using a special screen, and subsequent thermal annealing in order to establish hydrogen-containing donors in the basic n-layer within the triode zone of p⁺-n-p-type, having maximum concentration in the area enclosed between the collector p-n-transition and the middle of the basic n-layer, at the same time the depth of burial of maximum concentration of hydrogen-containing donors in the basic n-layer h_m [mcm], and a dose of protons Φ_nb [cm^-2] is determined based on empirical expressions depending on the specific resistance of initial silicon, spread of its values and specified level of reduction of avalanche breakdown voltage in the collector p-n-transition.

EFFECT: invention makes it possible to reduce labour intensiveness of the process for control of switching voltage of a power semiconductor instrument and to increase percentage of yield.

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