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(19)

(11)

2 453 590

(13)

(51)

IPC

C12N1/14(2006-01-01)

A01G1/04(2006-01-01)

G01N21/00(2006-01-01)

(21) (22)

Application

2010143323/10, 2010-10-21

(24)

Start date

2010-10-21

(22)

Actual filing date

2010-10-21

(45)

Published

2012-06-20

(72)

Inventor

Karnachuk Raisa AleksandrovnaGlukhova Ljubov' BorisovnaSokoljanskaja Ljudmila Olegovna

(73)

Holder

Gosudarstvennoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Gosudarstvennyj Universitet"

METHOD OF GROWING Lentinula edodes Berk. MYCELIUM Russian patent published in 2012 - IPC C12N1/14 A01G1/04 G01N21/00

Abstract RU 2453590 C1

FIELD: chemistry.

SUBSTANCE: method of growing Lentinula edodes. Berk myceliuminvolves inoculation of Lentinula edodes. Berk mycelium on a culture medium and selecting primary mycelium. The growth stimulant used is selective light with wavelength 430-480 nm, intensity 70-150 mcmol/cm²·s and exposure time of 1-60 minutes. Lentinula edodes. Berk mycelium is grown at temperature 24-26°C or 10-12 days. With exposure time of 30 minutes, the output of air-dry mass of mycelium is 72 mg.

EFFECT: method increases output of the air-dry mass of mycelium.

2 dwg, 2 ex

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RU 2 453 590 C1

Authors

Karnachuk Raisa Aleksandrovna

Glukhova Ljubov' Borisovna

Sokoljanskaja Ljudmila Olegovna

Dates

2012-06-20—Published

2010-10-21—Filed