PHOTOCATHODE Russian patent published in 2012 - IPC H01J40/06 H01J1/34 

FIELD: physics.

SUBSTANCE: photocathode includes a dielectric or semiconductor substrate on which there is a layer of photoelectron-emitting n-type semiconductor with band gap Eg₁. Quantum dots are grown on the surface of the semiconductor layer from an n-type semiconductor with band gap of the substrate Eg₂, decorated by atoms of an electropositive metal with total thickness of up to 3.0 monolayers. Eg₂<Eg₁.

EFFECT: high quantum yield of photoemission and possibility of selectively analysing and detecting incident radiation in different spectral ranges.

4 cl, 5 dwg