INCREASE SENSITIVITY PHOTOCATODE AND ITS MANUFACTURING METHOD Russian patent published in 2019 - IPC H01J1/34 H01J9/12 H01J40/06 

FIELD: physics.

SUBSTANCE: invention relates to the designs and production methods of increased sensitivity photocathodes, intended for operation at low light levels. These photocathodes are used for the photoelectronic devices, used for research purposes, in industry, for special purposes, etc. Increased sensitivity photocathode consists of substrate, photo-emission layer and intermediate layer to increase the potential barrier between the substrate and the photo-emission layer, differs in that the photo-emission layer is made of cesium telluride, the Cs₂Te, and the intermediate layer to increase the potential barrier between the substrate and the photo-emission layer is made on the basis of cesium iodide, the CsI. Increase sensitivity photocathode manufacturing method consists in the conductive material (Cr, Mo, W) application onto substrate, Te deposition on the surface, this surface processing by the Cs vapors for the Cs₂Te photocathode production, differs in that between the conductive material and the photocathode applying the alkali metal layer, and treating it with the iodine I vapors for the cesium iodide CsI intermediate layer production, which ensures the potential barrier development between the substrate and the photocathode.

EFFECT: increase in the photocathode external quantum yield due to decrease in the of photoelectrons recombination at the substrate interface.

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