SEMICONDUCTOR STRUCTURE FOR PHOTO CONVERTING AND LIGHT EMITTING DEVICES Russian patent published in 2015 - IPC H01L31/04 H01L33/02 H01L33/30 B82Y40/00 

FIELD: physics.

SUBSTANCE: semiconductor structure for photo converting and light emitting devices consists of semiconductor substrate (1) with face surface misaligned from plane (100) through (0.5-10) degrees and at least one p-n junction (2) including at least one active semiconductor ply (3) arranged between two barrier plies (4) with inhibited zone width E_g0. Active semiconductor ply (3) consists of 1^st and 2^nd type spatial areas (5, 6) abutting of barrier plies (3) and alternating in the plane of active semiconductor ply (3). 1^st type spatial areas (5) feature inhibited zone width E_g1 < E_g0, while 2^nd type areas have inhibited zone width E_g2 < E_g1.

EFFECT: higher efficiency owing to increased photo flux and higher level of photo generation and charge carrier separation, higher probability of photon generation and lower probability of radiation-free recombination.

11 cl, 11 dwg, 5 ex