METHOD OF MAKING NEGATIVE ELECTRON AFFINITY PHOTOEMITTER FOR INFRARED REGION Russian patent published in 2014 - IPC H01J40/06 B82B3/00 

FIELD: physics, optics.

SUBSTANCE: invention relates to emission- and nano-electronics and can be used in designing and producing second-generation photoelectronic converters and negative electron affinity emitters for infrared devices. The method of making a negative electron affinity photoemitter for the infrared region involves heating the surface of a substrate (base) made of doped gallium arsenide with hole conductivity (p-GaAs), lowering the temperature to room temperature, alternately spraying caesium and oxygen atoms onto the surface of the substrate and measuring photoemission current from the surface. The substrate is heated until concentration of arsenic on the surface increases more 1.5 times; composition of the surface is then fixed by sharply lowering temperature of the substrate to room temperature; caesium and oxygen atoms are then alternately sprayed in doses of monolayer fractions until a caesium film with a monoatomic thickness forms; the emitter is then placed in the atmosphere of an inert gas for a few minutes.

EFFECT: invention increases photosensitivity and prolongs process life, the time interval after formation to sealing into the device, reduced depth of the analysed layer, high accuracy of analysis results and high compatibility of the equipment for realisation thereof with other analysis methods and equipment.

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