FIELD: physics.
SUBSTANCE: semiconductor article has two parallel flat ends meant for connection with electrodes, and a perpendicular side surface with several edges. The article is made from crystalline material with a layered structure, having cleavage planes between layers that are perpendicular to said parallel flat ends and has a polygon shape in the cross-section, parallel to said flat ends. The cleavage planes between layers of the crystalline material lie parallel to diagonals of the polygon.
EFFECT: article has high strength qualities with optimum combination of electrophysical and thermophysical properties.
8 cl, 10 dwg
