FIELD: thermoelectric devices. SUBSTANCE: semiconductor item designed for Peltier- and Seebeck- effect thermoelectric devices is made of type AVBVI crystal material with parallel-layers laminated structure; its opposing faces are coated with electricity conducting layers arranged in parallel with layers of crystal material used for manufacturing semiconductor item. Face coated with electricity conducting layer is formed by crystal material surface obtained as result of material crystallization and free from destroying treatment. EFFECT: enhanced efficiency of thermoelectric devices. 3 dwg
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