GUNN DIODE Russian patent published in 2012 - IPC H01L47/02 

FIELD: physics.

SUBSTANCE: Gunn diode has an active layer with doping level which varies along the electric field. According to the invention, thickness of the active layer of the Gunn diode varies in the range of (1.0-1.8) mcm, the charge carrier doping level in the active layer uniformly varies from (1.1-1.4)*10¹⁶ cm^-3, at the first boundary of the active layer, to (1.8-2.4)*10¹⁶ cm^-3 at the second boundary of the active layer.

EFFECT: invention enables minimisation of drop in the level of generated microwave power while maintaining a wide frequency tuning range and high level of power.

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