PLANAR GUNN DIODE Russian patent published in 2022 - IPC H01L47/02 

FIELD: electrical engineering.

SUBSTANCE: invention can be applied in the national economy, more specifically, in medicine, military industry, etc. The stated positive effect will be obtained if the following conditions are fulfilled simultaneously: the active semiconductor element of the Gunn diode of the UHF generator has a planar structure; the span distance from the cathode contact to the anode contact is in the range of (3 to 4) mcm; the ratio of the conductive cross-sectional area of the cathode contact (S_k) to the corresponding area of the anode contact (S_a) is in the range S_k=(0.9 to 0.95)*S_a; the value of the doping level of the current carriers in the active (working) layer is in the range of (1 to 1.5)*10¹⁵ cm³.

EFFECT: use of the invention allows for a significant increase in the performance coefficient of UHF generators on Gunn diodes, allowing for an expansion of the functional range thereof.

1 cl, 1 dwg