HIGH-FREQUENCY DEVICE ON GUNN EFFECT Russian patent published in 1994 - IPC

FIELD: electronics. SUBSTANCE: high-frequency device based on Gunn effect has active layer made of semiconductor material of given type of conductance, two semiconductor layers of second type of conductance formed on both sides of it: first anode contact and second cathode contact located opposite to anode contact. Cathode contact includes regions injecting current and limiting current injection and forming matrix structure. Schottky barrier may be used as cathode region limiting current injection. Salient feature of high-frequency device based on Gunn effect is manufacture of Schottky barrier in V-shaped, trapezoidal or rectangular valleys of cathode. Depth of lying of boundary of cathode region limiting current injection is chosen from relation l≥ ΔrL/q·E_d, where ΔrL is energy gap between r and L valleys of semiconductor material; l is length of lying of region limiting current injection; q is charge of electron; E_d is average intensity of electric field. EFFECT: facilitated manufacture. 2 cl, 9 dwg