GUNN-EFFECT HIGH-FREQUENCY DEVICE Russian patent published in 1996 - IPC

FIELD: electronic engineering; electron-transfer semiconductor devices for generating microwave oscillations. SUBSTANCE: high-frequency device has active layer of n-type GaAs semiconductor material, N⁺-type layer formed on it on anode contact side, and N⁺-type layer of local areas on cathode contact side. Cathode contact has many areas injecting current into device and limiting current injection. Area injecting current in device form flat array of circular areas injecting current in device. Any of selected areas injecting current in device is surrounded by six adjacent areas injecting current in device and equally spaced from selected area. Product of carrier concentration n in active area by length 1a of active area n1a is selected from equation 2•10¹¹≅ n•la ≅ 1•10¹²[cm^-2]. In addition, length of active area 1a relates to linear dimensions of repetition period T of array of areas injecting current as 1:T(1-2):1. EFFECT: improved design. 2 cl, 9 dwg