SEMICONDUCTOR DEVICE WITH INTERVALLEY TRANSFER OF ELECTRONS Russian patent published in 2009 - IPC H01L47/02 

FIELD: physics.

SUBSTANCE: invention relates to solid state microwave electronics and can be used in designing microwave modules, meant for generating, amplifying and converting oscillations. The said semiconductor device for intervalley transfer of electrons contains series-connected metal and semiconductor layers layer n₁ of which forms an active drift region for electrons, layer forms an anode, and layer has thickness less than the electron mean free path in it, and semiconductor n₂ and metal Me₂ layers not connected to either of these layers. According to the invention, on the Gunn effect, the device also contains semiconductor layers and p⁺ and metal layers Me_3; from which the layer is put between layers Me₂ and n₂, and layer p⁺, with thickness less than the diffusion length of electrons in it, is joined to layer by one of its surfaces, and part of the other surface - with layers n₂ and Me₃, which lie in the same plane and do not touch. The latter contain an outer peripheral part. Layer n₂ is made from a semiconductor with a wider band gap than layer p⁺ with formation of a contact between layers n₂ and p⁺ of a heterojunction with discontinuity of the band bottom of valent states. The structural formula of the proposed device is given, consisting of three metal layers and six semiconductor layers, including one heterojunction.

EFFECT: invention increases efficiency, reduces noise level, increases output power of the generator and amplifier, increases sensitivity of the autodyne generator.

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