FIELD: physics.
SUBSTANCE: organic light-emitting device has a first metallic shunt and a second metallic shunt, where said first metallic shunt is in electric contact with a first electroconductive layer, and said second metallic shunt is in electric contact with a second electroconductive layer.
EFFECT: obtaining a light-emitting device which uses electrically insulating material between metallic shunts and a cathode without reducing effective surface area of the display element of the device.
11 cl, 6 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| TRANSPARENT ORGANIC LIGHT-EMITTING DEVICE WITH HIGH INTENSITY | 2010 |
|
RU2528321C2 |
| ELECTROLUMINESCENT DEVICE | 2012 |
|
RU2604890C2 |
| THIN-FILM TRANSISTOR OF LOW-TEMPERATURE POLYCRYSTALLINE SILICON AND THE METHOD OF ITS PRODUCTION | 2014 |
|
RU2634087C1 |
| HIDDEN ORGANIC OPTOELECTRONIC DEVICES HAVING LIGHT-SCATTERING LAYER | 2009 |
|
RU2480967C2 |
| DISPLAY SCREEN ON ORGANIC LIGHT-EMITTING DIODES AND AN ELECTRONIC DEVICE | 2018 |
|
RU2720080C1 |
| ONE-SIDED CAPACITIVE FORCE SENSOR FOR ELECTRONIC DEVICES | 2009 |
|
RU2454702C1 |
| LIGHT-EMITTING DEVICE AND METHOD TO MANUFACTURE LIGHT-EMITTING DEVICE | 2011 |
|
RU2525325C2 |
| APPARATUSES BASED ON SELECTIVELY EPITAXIALLY GROWN III-V GROUP MATERIALS | 2018 |
|
RU2752291C2 |
| METHOD FOR MULTILAYER GATE STRUCTURE AND STRUCTURE DESIGN | 2009 |
|
RU2498446C2 |
| THIN FILM TRANSISTOR WITH LOW CONTACT RESISTANCE | 2014 |
|
RU2662945C1 |
