METHOD FOR MULTILAYER GATE STRUCTURE AND STRUCTURE DESIGN Russian patent published in 2013 - IPC H01L21/3205 B82B3/00 

FIELD: electricity.

SUBSTANCE: method of multilayer gate structure manufacturing for field controlled transistors (FETs) includes formation of metal-containing layer directly at the first layer of TiN, titanium nitride, that covers areas of semiconductor substrate purposed for FETs of the first and second type; formation of protective coating by application of the second TiN-layer on top of the metal-containing layer; pattern generation at the second TiN-TiN-layer and metal-containing layer in order to cover only the first part of the first TiN-layer that covers the area designed for FETs of the first type; etching of the second part for the first TiN-layer which remains opened during pattern generation while the first part of the first TiN-layer is protected from etching due to its closure by part of the metal-containing layer with generated pattern; and formation of the third TiN-layer that covers the area of semiconductor substrate designed for FETs of the second type.

EFFECT: perfection of manufacturing technology for a multilayer gate structure.

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