APPARATUSES BASED ON SELECTIVELY EPITAXIALLY GROWN III-V GROUP MATERIALS Russian patent published in 2021 - IPC H01L21/20 

FIELD: electricity.

SUBSTANCE: invention relates to the field of manufacture of an electronic apparatus, particularly, to manufacture of apparatuses based on III-V group materials. The structure of the integrated microcircuit includes a substrate including monocrystalline silicon, an insulating layer on the substrate, wherein said insulating layer contains silicon and oxygen and a groove is made in the insulating layer, opening the surface of the monocrystalline silicon of the substrate, the first buffer layer in the groove and on the surface of the monocrystalline silicon of the substrate wherein the first buffer layer contains indium and phosphorus, the second buffer layer in the groove and on the first buffer layer wherein the second buffer layer contains indium, gallium, arsenic and antimony, the layer of the channel of the apparatus on the second buffer layer wherein the layer of the channel of the apparatus contains indium, gallium and arsenic, wherein the layer of the channel of the apparatus has a top and side walls.

EFFECT: technical result is manufacture of an electronic apparatus based on III-V group materials.

1 cl, 16 dwg