THIN FILM TRANSISTOR WITH LOW CONTACT RESISTANCE Russian patent published in 2018 - IPC H01L29/786 H01L21/336 H01L27/12 

FIELD: electrical engineering.

SUBSTANCE: invention relates to a thin film transistor (TFT) comprising substrate (100) with layer (101) of a gate electrode superimposed and structured thereon and insulating shutter layer (102) superimposed on the gate electrode layer and substrate. Transistor further comprises (i) base injection layer (103) located above insulating shutter layer (102), (ii) source/drain electrode (S/D) layer (104) superimposed on the base injection layer, and (iii) semiconductor layer (106), which is directly in contact with the gate insulating layer, base injection layer and the source/drain electrode layer. Method for producing such transistors, devices containing such TFTs, and the use of such TFTs are proposed.

EFFECT: invention provides a semiconductor laminate that has improved conductive properties.

28 cl, 12 dwg