METHOD OF INCREASE OF CONTROL VOLTAGE ON THE GATE OF THE GAN TRANSISTOR Russian patent published in 2018 - IPC H01L21/283 

FIELD: electrical engineering.

SUBSTANCE: invention relates to power electronics technology, namely to the technology of obtaining discrete power transistors based on gallium nitride operating in the enrichment mode. On the surface of a semiconductor wafer with epitaxial heterostructures of the p-GaN/AlGaN/GaN type, a thin insulating film based on silicon nitride with a thickness of 1 to 50 nm is deposited by plasma-chemical methods. Next, a two-layer resistive mask is formed. Then the plate is loaded into a thin film evaporation plant in a vacuum where the deposition of palladium-based films 10 to 500 nm thick is carried out. Further, the plate is removed from the vacuum chamber, followed by removal of the resistive mask. Then, using a selective plasma-chemical etching along a solid mask of the shutters, a p-GaN mesa-region underlayment is formed, as well as inter-instrumental meza-isolation, followed by the formation of ohmic contacts to the drain and source regions of the GaN transistor.

EFFECT: invention provides an increase in the control voltage at the gate of the GaN transistor when barrier film metals are applied to the p-GaN gate region with a high work function of electrons such as Ni, Pd, and Ti.

6 cl, 3 dwg