FIELD: physics.
SUBSTANCE: optical element includes a semiconductor layer, having a band gap greater than the energy of light photons, and a plurality of electrodes in electrical contact with the semiconductor layer. At least one of the electrodes forms a Schottky barrier between the electrode and the semiconductor layer, wherein said Schottky barrier has a barrier height less than the energy of light photons. At least part of the transition surface between the electrode which forms the Schottky barrier and the semiconductor layer includes a light-irradiated surface, which is arranged with possibility of irradiation with light from the surface of the semiconductor layer without electrodes, and an area which enables interaction of the structure, adapted to interact with a terahertz wave which is generated or detected by irradiation with light.
EFFECT: high efficiency of generating terahertz waves.
8 cl, 2 ex, 6 dwg
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Authors
Dates
2012-09-27—Published
2011-03-01—Filed