METHOD OF FULLY OPTICAL MODULATION OF LIGHT BY Mi-RESONANT STRUCTURES BASED ON DIRECT SEMICONDUCTORS Russian patent published in 2018 - IPC G02F1/01 B82Y99/00 

Abstract RU 2653187 C1

FIELD: optics.

SUBSTANCE: use to create optical modulators and switches for laser radiation in given spectral range using nanoscale optics. Essence of the invention consists in that device for optical modulation of electromagnetic radiation intensity is Mi-resonant structure in form of transparent dielectric substrate with two-dimensional periodic lattice formed on its surface formed by particles from direct-gap semiconductor with subwave dimensions with particle-spacing from 100 nm to 10 mcm.

EFFECT: providing possibility of increasing efficiency of interaction of radiation with photon modulator.

9 cl, 1 tbl, 4 dwg

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RU 2 653 187 C1

Authors

Zubyuk Varvara Vladimirovna

Shcherbakov Maksim Radikovich

Vabishchevich Polina Petrovna

Sharipova Margarita Ilgizovna

Dolgova Tatyana Viktorovna

Fedyanin Andrej Anatolevich

Dates

2018-05-07Published

2016-12-26Filed