LAMINATED MATERIAL FOR PHOTOCONDUCTIVE ANTENNAS Russian patent published in 2021 - IPC H01L27/15 H01L33/30 

FIELD: semiconductor materials.

SUBSTANCE: invention relates to semiconductor materials of the A3B5 group used for the manufacture of photoconductive antennas for generating or detecting terahertz electromagnetic waves. The method for forming a material for a photoconductive antenna consists in forming a multilayer structure consisting of alternating InGaAs/InAlAs layers epitaxially grown at a temperature of 300-500°С on a GaAs or InP substrate with an orientation (100). The composition of the layers is selected so that the band gap in both compounds is the same and makes it possible to absorb optical radiation with a wavelength of 1.0-1.56 microns. The thickness of each layer is in the range from 2 nm to 20 nm. To match the lattice parameter of the InGaAs or InAlAs compound with the substrate, a transition metamorphic buffer can be preliminarily formed.

EFFECT: invention provides possibility of manufacturing a multilayer structure of photoconductive layers, providing a decrease in the lifetime of charge carriers and dark current while maintaining a sufficiently high mobility.

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