FIELD: radio engineering, communication.
SUBSTANCE: material comprises a LT-InGaAs film epitaxially grown at a reduced temperature on an InP substrate, characterised in that an InP substrate is used with a crystallographic orientation (n11) A, where n = 1, 2, 3…; the LT-InGaAs film is doped with impurities by amphoteric properties (for example, silicon); the ratio of arsenic fluxes and group III elements (gallium and indium) is chosen such that the grown LT-InGaAs film had a hole type of conductivity.
EFFECT: providing the possibility of simplifying the technological process and controlling the range of generation and reception of radiation.
2 dwg
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