METHOD OF MEASURING QUANTUM OUTPUT OF INTERNAL PHOTOELECTRIC EFFECT IN SEMICONDUCTORS Russian patent published in 2012 - IPC G01R31/26 H01L31/00 

FIELD: physics.

SUBSTANCE: method of measuring quantum output of internal photoelectric effect in semiconductors involves transmitting electromagnetic radiation with given parameters to the surface of a photodetector, measuring spectral sensitivity, determining the reflection coefficient and calculating quantum output; the photodetector used is photoelectric mesostructures in which the charge carrier separation factor is invariable in a wide spectral range of wavelengths shorter than the characteristic wavelength of the structure, and characterised by a theoretical calculation model; one physical quantity is measured and the quantum output of radiation with wavelength λ is determined using a disclosed formula.

EFFECT: simple measurement process, high accuracy and reliability of measurements, wider spectral range.

4 cl, 2 dwg