PHOTOELECTRIC STRUCTURE FOR MEASURING QUANTUM OUTPUT OF INTERNAL PHOTOELECTRIC EFFECT AND METHOD OF MAKING SAID STRUCTURE Russian patent published in 2012 - IPC G01R31/26 H01L31/00 

FIELD: physics.

SUBSTANCE: photoelectric structure for measuring quantum output of internal photoelectric effect has a working surface on which radiation is incident, a semiconductor base region with one type of conductivity, metal contacts, barriers which separate charge carriers and regions with type of conductivity which is opposite to that of the base, lying in part on the working surface on which radiation is incident; there are metal contacts on said regions and barriers; barriers and said regions with contacts have shape of a comb consisting of strips of equal width and equidistant from each other; and the structure is characterised by a theoretical calculation model. A method of making the photoelectric structure for measuring quantum output of internal photoelectric effect is also disclosed.

EFFECT: simple measurement process, high accuracy and reliability of measurements, wider spectral range and broader functional significance.

18 cl, 3 dwg