MEMS DEVICES WITH SUPPORT STRUCTURES AND METHODS OF THEIR PRODUCTION Russian patent published in 2012 - IPC B81B7/02 G02B26/10 

Abstract RU 2468988 C2

FIELD: process engineering.

SUBSTANCE: devices MEMS are produced as follows. Electrode layer is applied onto substrate.Temporary layer is applied on said electrode layer. Said temporary layer is perforated. Moving layer is applied on said temporary layer. Support structures are made above moving layer and, partially, in temporary layer perforation. Moving layer section extends between, at least, two support structures. Temporary layer is etched out to form cavity between moving layer and electrode layer.

EFFECT: moving layer section may be deformed and pressed to underlying layers in response to electrostatic potential between moving and electrode layers.

128 cl, 101 dwg

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RU 2 468 988 C2

Authors

Chuj Klarens

Chang Vonsak

Ganti Sur'Ja Prakash

Kotkhari Manish

Majlz Mark V.

Sehmpsel Dzhefri B.

Sasagava Teruo

Dates

2012-12-10Published

2006-07-20Filed