GAS SENSOR Russian patent published in 2012 - IPC G01N27/12 

Abstract RU 2469301 C1

FIELD: physics.

SUBSTANCE: semiconductor base is made from a polycrystalline film of copper iodide and the substrate is the electrode pad of a piezo-quartz resonator.

EFFECT: high sensitivity of the sensor and manufacturability thereof.

3 dwg

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RU 2 469 301 C1

Authors

Kirovskaja Iraida Alekseevna

Bugerko Lidija Nikolaevna

Dates

2012-12-10Published

2011-06-09Filed