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(19)

(11)

2 469 300

(13)

(51)

IPC

G01N27/12(2006-01-01)

(21) (22)

Application

2011120656/28, 2011-05-20

(24)

Start date

2011-05-20

(22)

Actual filing date

2011-05-20

(45)

Published

2012-12-10

(72)

Inventor

Kirovskaja Iraida AlekseevnaDubina Oksana Nikolaevna

(73)

Holder

Gosudarstvennoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Gosudarstvennyj Tekhnicheskij Universitet"

SEMICONDUCTOR GAS ANALYSER Russian patent published in 2012 - IPC G01N27/12

Abstract RU 2469300 C1

FIELD: physics.

SUBSTANCE: semiconductor base is made from a polycrystalline film cadmium selenide doped with indium antimonide. The substrate is the electrode pad of a piezo-quartz resonator.

EFFECT: high sensitivity of the sensor and manufacturability thereof.

3 dwg

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RU 2 469 300 C1

Authors

Kirovskaja Iraida Alekseevna

Dubina Oksana Nikolaevna

Dates

2012-12-10—Published

2011-05-20—Filed