SEMICONDUCTOR GAS ANALYSER Russian patent published in 2010 - IPC G01N27/12 

Abstract RU 2398219 C1

FIELD: chemistry.

SUBSTANCE: disclosed gas analyser has a semiconductor base made from a polycrystalline film of indium antimonide doped with zinc telluride, deposited on the electrode pad of a piezoelectric crystal resonator which serves as the substrate.

EFFECT: increased sensitivity of the sensor and its manufacturability.

3 dwg

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RU 2 398 219 C1

Authors

Kirovskaja Iraida Alekseevna

Shubenkova Ekaterina Garr'Evna

Dates

2010-08-27Published

2009-06-01Filed