SEMICONDUCTOR GAS SENSOR OF AMMONIA TRACE IMPURITIES Russian patent published in 2017 - IPC G01N27/12 

FIELD: measuring equipment.

SUBSTANCE: invention relates to gas analysis, in particular, to devices used for recording and measuring the content of ammonia trace impurities. Sensor includes a semiconductor base and a substrate. Semiconductor base is made from a polycrystalline film of indium antimonide doped with cadmium telluride – (InSb)_0.98(CdTe)_0.02, and the substrate used is an electrode pad of a piezocrystal resonator. Proposed sensor with considerable simplification of its manufacturing technology makes it possible to determine the content of ammonia with a sensitivity several times higher than that of existing sensors.

EFFECT: technical result is higher sensitivity and manufacturability of the sensor.

1 cl, 3 dwg