METHOD OF DETERMINING THICKNESS OF UNIFORM NANOLAYER IN INFRARED RADIATION Russian patent published in 2012 - IPC G01B11/06 G01B9/02 B82Y35/00 

FIELD: physics.

SUBSTANCE: method involves depositing a layer onto a substrate, which is capable of directing a surface electromagnetic wave (SEW), exposing the substrate to probe radiation, converting the radiation to SEW, detecting changes in the SEW as a result of it travelling a macroscopic distance Δx, calculating the thickness of the layer from the measurement results and values of optical constants of the substance of the layer and material of the substrate. The SEW is converted to a volume wave. The beam of probe radiation and the volume wave are superimposed. Resultant intensity of interfering waves before and after the SEW travels a distance Δx is recorded and thickness of the nanolayer is calculated based on phase increment of the SEW by the distance Δx.

EFFECT: high accuracy of determining thickness of a uniform nanolayer in infrared radiation.

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