FIELD: electricity.
SUBSTANCE: solid-state material is taken, which has a thermal expansion ratio and at least one surface suitable for generation of a layer on it. A polymer layer is formed on the specified surface so that adhesion remains between a solid-state layer and a polymer layer within the entire specified range of TS temperatures between the first temperature and the second temperature. The polymer layer has a thermal expansion ratio different from the thermal expansion ratio of the solid-state material. Further the solid-state material and the polymer layer attached by adhesion are exposed to variation of local temperature from the first temperature, which is not higher than approximately 300°C, to the second temperature, which is lower than approximately room temperature, thus causing mechanical stress in the solid-state material due to difference between the thermal expansion ratio of the solid-state material and the thermal expansion ratio of the polymer layer, in order to cause breakage of the solid-state material along the inner plane in the thickness of the solid-state material, to manufacture at least one autonomous solid-state layer from the specified solid-state material. The polymer layer is additionally characterised by vitrification temperature, which is lower than approximately the first temperature and higher than approximately the second temperature, and is sufficiently low to prevent breakage or cracking of the polymer at the second temperature.
EFFECT: development of the method of thermal treatment to manufacture high-quality autonomous solid-state layers preserving characteristics of an initial material, of which they are made, and used for microelectronics.
20 cl, 6 dwg, 1 ex
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Authors
Dates
2013-01-10—Published
2008-10-24—Filed