METHOD OF MAKING COMPOSITE SUBSTRATE FROM SIC Russian patent published in 2020 - IPC C30B29/36 C30B25/20 C30B25/22 C30B29/68 C23C16/01 C23C16/32 H01L21/02 H01L21/205 H01L21/265 H01L29/12 C23C28/04 H01L29/73 H01L29/772 H01L29/862 H01L29/868 H01L29/872 

FIELD: manufacturing technology.

SUBSTANCE: invention relates to the technology of producing a composite substrate of SiC with a monocrystalline SiC layer on a polycrystalline SiC substrate, which can be used in production of powerful semiconductor devices: diodes with Schottky barrier, pin-diodes, pin-diodes, field-effect transistors and bipolar transistors with isolated gate (IGBT), used for supply control at high temperatures, frequencies and power levels, and at growing of gallium nitride, diamond and nano-carbon thin films. Method of producing a composite SiC substrate containing a monocrystalline SiC layer on a polycrystalline SiC substrate comprises the steps of: providing a monocrystalline substrate of SiC 12s, providing a support substrate of Si 21, forming a region of ion implantation 12i in a monocrystalline substrate of SiC 12s, connection of the ion implantation region 12i of the monocrystalline substrate from SiC 12s on one side of Si 21 support substrate to form bonded substrate 13, lamination of substrate 13 in area of ion implantation 12i to form monocrystalline SiC 12 layer on support substrate 21 to produce carrier 14 of monocrystalline SiC 12 layer, heating carrier 14 of monocrystalline SiC 12 layer to a temperature lower than 1414 °C and depositing thereon a portion of polycrystalline SiC 11a substrate with thickness t₁ of at least 30 mcm, to obtain layered structure 15a, heating carrier of obtained layer structure 15a to temperature of 1414 °C or higher and additional deposition of polycrystalline SiC 11b substrate to thickness t equal to 100–650 mcm, using a chemical vapor deposition process to form layer structure 15, when melting at least a portion of support substrate 21, cooling obtained structure 15 and physical and/or chemical removal of support substrate 21 to obtain composite substrate of SiC 10.

EFFECT: invention enables to obtain a composite substrate of SiC with a monocrystalline SiC layer, having good crystallinity and weak warping, using simple technology.

5 cl, 2 dwg, 1 tbl, 1 ex