PHOTOSENSITIVE DEVICE AND METHOD OF ITS MANUFACTURE Russian patent published in 2019 - IPC H01L31/352 H01L31/18 B82Y40/00 

FIELD: electrical engineering.

SUBSTANCE: group of inventions relates to the technology of solid-state electronics and can be used in developing photodetectors of the visible and near infrared range. Photosensitive device has an electrode and a photosensitive layer structure formed on it, having a silicon substrate with p-type conductivity, having a surface with crystallographic orientation (111), with a layer of silicon carbide formed thereon. On SiC layer there is a planarizing layer of dielectric from light-transmitting polymer. Planarizing layer comprises an array of nanorods GaN pre-synthesized on a SiC layer and oriented perpendicular to the substrate; a light-transmissive electrode is formed on the planarizing layer, which provides electrical contact with the nanorods. Layers of the device are formed in stages. First, SiC is formed on a silicon substrate having a surface with crystallographic orientation (111) by substitution of atoms to form carbon-vacancy structures, then, mass of nanorods of GaN oriented perpendicular to substrate is formed on layer of silicon carbide by molecular-beam epitaxy with plasma activation of nitrogen, after which electrode is formed. Further, an array of nanorods of GaN is coated with a planarizing layer of a dielectric material from a solution of a light-transmitting polymer, and a light-transmissive electrode is formed on a planar layer at a fifth step.

EFFECT: invention provides high crystalline perfection of photosensitive structure due to matching parameters of crystal lattices of formed layers with simultaneous expansion of absorbed radiation range.

5 cl, 3 dwg