SEMICONDUCTOR LIGHT-EMITTING DEVICE Russian patent published in 2013 - IPC H01L33/48 

FIELD: electricity.

SUBSTANCE: semiconductor light-emitting device comprises a body made by means of application of the first insulating layer, having a pair of positive and negative current-conducting connections formed on its upper surface, an interlaminar layout under the first insulating layer and the second insulating layer under the interlaminar layout; a semiconductor light-emitting element, which has a pair of a positive and a negative electrodes on one and the same side of the surface and which is installed with these electrodes oppositely to current-conducting connections; and a sealing element, which coats the semiconductor light-emitting element, besides, some current-conducting connections are generated to be stretched in direction of the outer edge of the sealing element directly from under the semiconductor light-emitting element, along the upper surface of the first insulating layer, and is connected with the interlaminar layout via a current-conducting connection installed in direction of body thickness, and the interlaminar layout is arranged so that it is located at a distance from the outer border of the semiconductor light-emitting element when looking through the body at the side of the upper surface of the first insulating layer.

EFFECT: higher efficiency of light radiation.

12 cl, 2 ex, 15 dwg