FIELD: electrical engineering.
SUBSTANCE: disclosed is the ultraviolet light emitting nitride semiconductor element, which is capable to effectively remove the waste heat, generated during the ultraviolet light emission process. Ultraviolet light emitting nitride semiconductor element includes semiconductor layered region 11 with the n-type AlGaN layer 6, AlGaN layer active layer 7 and the p-type AlGaN layers 9 and 10; n-electrode 13; p-electrode 12; protective insulating film 14 and the first applied electrode 15, produced by the wet coating application method and consisting of copper or alloy, containing copper as the main component. Semiconductor layered region 11 is formed in the first region R1, and a p-electrode is formed on the region 11. AlGaN based n-type semiconductor layer 6 upper surface is exposed in the second region, and the n-electrode 13 is formed on the upper surface. Protective insulating film 14 has openings for opening at least one portion of the n-electrode 13 and at least one portion of the p-electrode 12. First applied electrode 15 is spaced from the n-electrode 13 exposed surface and covers the first region entire upper surface and the entire outer side surface and part of the second region, which is in contact with the first region. Also disclosed is the ultraviolet light emitting nitride semiconductor, based on the ultraviolet light emitting nitride semiconductor element.
EFFECT: invention allows to effectively remove heat generated during the ultraviolet light emission process.
17 cl, 16 dwg
