LIGHT SOURCE Russian patent published in 1999 - IPC

FIELD: semiconductor optoelectronics; solid-state light sources. SUBSTANCE: device has fluorescent semiconductor chips with p-n junctions placed in N depressions of base and relevant contacts on their both sides; base is made of silicon strip covered with insulating layer carrying isolated bonding sections that cover depressions and adjacent sections of base; upper contact of each i-th chip is connected through wire electrode to bonding section of i-th depression and upper contact of i-th chip, to bonding area above base surface. EFFECT: improved power, reduced size, facilitated manufacture. 1 cl, 2 dwg