FIELD: electrical engineering.
SUBSTANCE: according to the method, charge stock containing a gallium source and flux components is heated and maintained at the specified temperature or, alternatively, heated and slowly cooled down from the specified temperature inside a container, with a temperature gradient maintained between the upper and the lower parts of the container under a nitrogen-containing gas pressure. The flux, by way of core components, contains cyanides or cyanamides or dicyanamides of alkaline and/or alkaline-earth metals and modifying additives enhancing gallium nitride solubility and/or increasing growth rate and/or enabling control of physical properties of crystals obtained.
EFFECT: reduced rate of corrosion of the latter, improved quality of monocrystals obtained.
16 cl, 2 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF PRODUCING POLYCRYSTALLINE COMPOSITE MATERIAL | 2011 |
|
RU2525005C2 |
| GALLIUM NITRIDE MONOCRYSTAL GROWING METHOD | 2006 |
|
RU2315825C1 |
| METHOD OF PRODUCING AB MONOCRYSTALS | 2009 |
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RU2400574C1 |
| METHOD FOR PRODUCTION OF POWDER OF CUBIC BORON NITRIDE | 1993 |
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RU2051085C1 |
| METHOD FOR EPITAXIAL GROWTH OF MONOCRYSTALS OF METALS NITRIDES OF 3A GROUP OF CHEMICAL ELEMENTS | 1996 |
|
RU2097452C1 |
| METHOD FOR PRODUCTION OF BATCH FOR WURTZITE-STRUCTURE SINGLE CRYSTAL GROWTH | 2003 |
|
RU2249063C1 |
| METHOD OF GROWING CRYSTALS OF GROUP III METAL NITRIDES | 2009 |
|
RU2405867C2 |
| METHOD OF CRYSTALLINE GALLIUM ARSENIDE PREPARING | 0 |
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SU1809847A3 |
| SUBSTRATE FOR GROWING OF EPITAXIAL LAYERS OF GALLIUM NITRIDE | 2007 |
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RU2369669C2 |
| COMPLEX LITHIUM-ALKALINE-EARTH METAL BORON NITRIDE, METHOD OF ITS PRODUCING, CATALYST FOR $$$-$$$-CONVERSION IN BORON NITRIDE AND METHOD OF CUBICAL BORON NITRIDE MAKING WITH THIS CATALYST | 1994 |
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RU2078030C1 |
