METHOD OF GROWING CRYSTALS OF GROUP III METAL NITRIDES Russian patent published in 2010 - IPC C30B25/00 C30B25/14 C30B29/38 

FIELD: chemistry.

SUBSTANCE: method of growing crystals of group III metal nitrides from a gas phase involves placing a substrate 12 into the top part of a reactor over a source of a group III metal 5 and feeding gas streams to the surface of the substrate 12 in a direction opposite the direction of force of gravity, each containing at least one chemically active gas and at least one carrier gas. To increase efficiency of the process, consumption of chemically active gases meets the following condition: G_v/G_III=5÷1000, where G_v is molar consumption of chemically active gases containing a group V element - nitrogen, for example ammonia, G_III is molar consumption of chemically active gases containing a group III metal. Each chemically active gas is mixed with at least one carrier gas until obtaining gas streams in which overall density of the gas mixture containing chemically active gas which contains a group III metal, is less than overall density of a gas mixture containing chemically active gas which contains a group V element - nitrogen. Such a ratio of densities of gas mixtures improves the structure of gas streams in the reactor and enables to eliminate vortex recirculating flow under the substrate. The obtained gas streams are then fed in the direction of the substrate 12 through annular channels 8, 9, 10, formed symmetrically about the axis of the reactor.

EFFECT: improved quality of crystals and controllability of the process owing to improved structure of gas streams in the reactor.

4 cl, 4 dwg