GALLIUM NITRIDE MONOCRYSTAL GROWING METHOD Russian patent published in 2008 - IPC C30B25/00 C30B29/38 

FIELD: crystal growing.

SUBSTANCE: invention relates to technology of growing semiconductor materials on substrate through chemical reactions of reactive gases and can be used in semiconductor industry. Method involves supplying hydrogen chloride to container with gallium source followed by supplying gas mixture containing gaseous gallium chloride, ammonia, and carrying gas to the surface of substrate. To increase gallium nitride monocrystal growth rate and simultaneously improve quality of gallium nitride monocrystal, supplying hydrogen chloride to container with gallium source is accompanied with passing carrying gas to additional gallium source. Then, aforesaid gas mixture is passed to the surface of substrate. To prevent possibility of getting particles on growth surface and to increase stability of process parameters, temperature of container with gallium source, to which hydrogen chloride is supplied, is maintained above 700°C, temperature of additional gallium source is maintained from 1100 to 1400°C, and temperature of gas phase in reactor as well as reactor wall temperature are maintained by 100-200°C higher then substrate temperature.

EFFECT: accelerated crystal growth and improved quality of monocrystals.

3 dwg