FIELD: physics.
SUBSTANCE: image forming semiconductor device has a carrier confinement part and an amplifying part in each pixel, where a first voltage applied across a transfer electrode, when the transfer part for moving carriers from the carrier confinement part the amplifying part is in a non-conducting state, having polarity which is opposite that of voltage applied across the transfer electrode when the transfer part is connected, and a second voltage, which applied across the control electrode of the carrier confinement part during the confinement period in which carriers are confined in the carrier confinement part, has the same polarity as that of the first voltage, and has a greater absolute value than the first voltage.
EFFECT: reduced dark current in the carrier confinement part and retention of the withstand voltage of the transfer part.
8 cl, 8 dwg
