FIELD: physics.
SUBSTANCE: in the photoelectric conversion device, having charge accumulation areas in the image forming region, the insulation regions of the charge accumulation areas include first insulation areas having a p-n junction and second insulation areas having an insulator. The second insulation area lies between the charge accumulation area and at least part of a plurality of transistors.
EFFECT: reduced charge penetration from the insulation region to the charge accumulation areas.
9 cl, 8 dwg
